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Ill-estimators, 3 14 Mallows estimator, 315 Markatou, M., 299 Maronna, R.A., 168, 195, 214, 220, 223, 224, 234 Martin, R.D., 195 Matheron, G., 258 Maximum asymptotic level, 299 Maximum bias, 101, 102 of M-estimate, 53 Maximum likelihood and Bayes estimates, 327 Maximum likelihood estimate of scatter matrix, 210 Maximum likelihood estimator, 301 GLM, 304 Maximum likelihood type estimate, see M-estimate Maximum variance under asymmetric contamination, 102, 103 Mean saddlepoint approximation, 308 Mean absolute deviation, 2 Measure empirical, 9 regular, 24 substochastic, 76, 80 Median, 17, 95, 128, 141, 282, 294 continuity of, 54 has minimax bias, 73 influence function, 57, 135 Median absolute deviation (MAD), 106, 108, 112, 141, 172, 205, 283 as the most robust estimate of scale, 119 compared to interquartile distance, 106 influence function, 135 Median absolute residual, 172, 173 Median polish, 193 Memll, H.M., 188 Method of steepest descent, 308 Metric Bounded Lipschitz, see Bounded Lipschitz metric Kolmogorov, see Kolmogorov metric Ltvy, see Ltvy metric Prohorov, see Prohorov metric total variation, see Total variation metric Miller, R., 15 Minimax bias, 72, 73 Minimax global fit, 240

0.2 0.1

PowerSpectralDensity. The power spectral density, or power density spectrum, describes the distribution of power with respect to frequency. It is defined as the Fourier transform of the autocorrelation function:

12. Click OK to accept the feature. Notice the drafted face steps out from the main part faces. Take a moment to examine the result of the Step Draft. 13. To create Rib features, on the Front plane, create a sketch like that shown in Figure 32.34. Initiate a Rib feature, and make it 0.075 inch wide at the base, with 1 degree of draft. Make sure you are using the Parallel to Sketch option (skyline).

TABLE 3-14

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Each of these four functions has strengths and weaknesses. Because of this, there is no one feature that is clearly superior to the others. Most of the weaknesses have to do with file management, the types of data that they can work with, the ease of creating an assembly, and access to children from the parents. Unfortunately, I cannot offer a single solution that addresses all of the problems and retains each of the strengths. I look to this area of the software being improved in a future release. If I were responsible for the functionality, I would consolidate the four flawed functions into a single feature that would be primarily used as a Push type master model function. This feature would have the ability to pre-select which bodies, reference geometry, and even sketches would be pushed out to the child part, and it would make every piece of it redefinable without losing existing data.

CAD administration and organizing any group of people on some level always comes down to trusting employees to do the right thing. There is no way to completely secure any system against all people trying to work around the system, so you must rely on hiring people you can train and trust. n

group of memory transistors. The operation of this approach to flash memory will be described with the assistance of Figure 3.37 and Table 8.6. The program operation depends on uniform tunneling from the substrate to the floating gate. In the DiNOR array, this is accomplished by applying a bias of 10 V to the gate while the source line and the p well are biased at -9 V. The select gate is also biased at -9 V to prevent any current flow through the memory transistors. A triple-well process is used to split the potential difference and avoid applying more than 10 V bias across the junction in any well. In the selective erase mode, the word line of the selected row is biased at -9 V. The select gate is bias at 10 V to allow access to the memory transistors. Figure 8.38 shows the erase conditions within a pati al array. Those transistors that are to be erased have 6 V applied to their bit lines. These transistors will be erased to a conducting state, "0", by tunneling of electrons from the floating gate to the drain. The cell on WL0 that is connected to MBL1 has 0 Von the drain. This results in a lower field across the oxide between floating-gate and drain so that the tunneling current is reduced to such a small valte that this cell remains programmed to a nonconducting, "1," state. Because the low threshold voltage erased state is the state that is selectively written, the DiNOR operation is able to tighten the threshold distribution by the

The temperature on the system boards is one of the more important things to watch. The higher the temperature becomes, the more the chance there is of developing a problem. If the temperature exceeds 50 degrees Celsius (122 degrees Fahrenheit), you run the risk of the system shutting itself down to prevent further overheating. Note that if your system keeps shutting itself down because of temperature, you have a cooling issue that should be resolved. When the temperature gets too hot, the displayed message will show up as WARNING or CRITICAL.

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